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1 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com datasheet subject to change without notice. primary applications product description key features measured performance 17-24 ghz linear driver amplifier ? frequency range: 17-24 ghz ? 25.5 dbm nominal psat, 23.5 dbm nominal p1db ? gain: 20 db ? otoi: 33 dbm typical ? bias: vd = 5 v, idq = 320 ma, vg = -0.5 v typical ? package dimensions: 4 x 4 x 0.85 mm ? point-to-point radio ? point-to-multipoint communications the triquint tga2521-sm is a three stage hpa mmic design using triquint?s proven 0.25 um power phemt process. the tga2521-sm is designed to support a vari ety of millimeter wave applications including point-to-point digital radio and other k band linear gain applications. the tga2521-sm provides 23.5 dbm nominal output power at 1db compression across 17- 24ghz. typical small signal gain is 20 db at 17ghz and 20db at 23ghz. the tga2521-sm requires minimum off-chip components. each device is dc and rf tested for key parameters. the device is available in a 4x4mm plastic qfn package. lead-free and rohs compliant. bias conditions: vd = 5 v, id = 320 ma, vg = -0.5 v typical
2 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii recommended operating conditions table i absolute maximum ratings 1 / symbol parameter value notes vd-vg drain to gate voltage 11 v vd1, vd2 drain voltage 8 v 2 / vg1, vg2 gate voltage range -5 to 0 v id1 drain current 115 ma 2 / id2 drain current 407 ma 2 / ig1 gate current range 8 ma ig2 gate current range 34 ma pin input continuous wave power 23 dbm 2 / tchannel channel temperature 200 c 1 / these ratings represent the maximum operable val ues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause per manent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in table iv. symbol parameter 1 /v a l u e vd1, vd2 drain voltage 5 v id1+id2 drain current 320 ma id_drive drain current under rf drive tbd ma vg1 vg2 gate #1 voltage gate #2 voltage -0.5 v -0.5 v 1 / see assembly diagram for bias instructions.
3 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii rf characterization table symbol parameter test conditions min nom max units gain small signal gain f = 17.7 ? 23.6 ghz 18.5 20 db irl input return loss f = 17.7 ? 23.6 ghz 14 db orl output return loss f = 17.7 ? 23.6 ghz 12 db psat saturated output power 1 / f = 17.7 ? 23.6 ghz 23 25.5 dbm p1db output power @ 1db compression 1 / f = 17.7 ? 23.6 ghz 21 23.5 dbm toi output toi f = 17.7 ? 23.6 ghz 30 33 dbm nf noise figure f = 17.7 ? 23.6 ghz 5 7 db bias: vd = 5 v, id = 320 ma, vg = -0.5 v, typical 1 / psat and p1db measurements performed with vg held constant. drain current increases under rf drive.
4 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv power dissipation and thermal properties parameter test conditions value notes maximum power dissipation tbaseplate = 85 c pd = 3.9 w tchannel = 200 c 1 / 2 / thermal resistance, jc vd = 5 v id = 320 ma pd = 1.6 w jc = 29.5 c/w tchannel = 127 c tm = 7.7e+6 hrs thermal resistance, jc under rf drive vd = 5 v id = tbd ma pout = tbd dbm pd = tbd w jc = tbd c/w tchannel = tbd c tm = tbd hrs mounting temperature 30 seconds 320 c storage temperature -65 to 150 c 1 / for a median life of 1e+6 hours, power dissipation is limited to pd(max) = (150 c ? tbase c)/ jc. 2 / channel operating temperature will directly affect the device lifetime. for maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. median lifetime (tm) vs. channel temperature
5 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data bias conditions: vd = 5 v, id = 320 ma, vg = -0.5 v typical
6 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data bias conditions: vd = 5 v, id = 320 ma, vg = -0.5 v typical
7 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data bias conditions: vd = 5 v, id = 320 ma, vg = -0.5 v typical
8 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data bias conditions: vd = 5 v, i dq = 320 ma, vg = -0.5 v (vg held constant from small signal to psat) bias conditions: vd = 5 v, id = 320 ma, vg = -0.5 v (id held constant from small signal to psat)
9 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data bias conditions: vd = 5 v, id = 320 ma, vg = -0.5 v typical (id held constant from small signal to psat)
10 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data bias conditions: vd = 5 v, id = 320 ma, vg = -0.5 v typical
11 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data bias conditions: vd = 5 v, id = 320 ma, vg = -0.5 v typical bias conditions: vd = 5 v, id = 320 ma, vg = -0.5 v typical
12 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com package pinout pin description 3r f i n 11 rf out 16 vg1 14 vg2 15 vd1 (top) 6 vd1 (bot) 13 vd2 (top) 7 vd2 (bot) 1,2,4,9,10,12,17 gnd 5,8 no connect pin 1 dot by marking top view pin #1 identification bottom view side view 15 6 9 10 11 8 7 12 13 14 5 4 3 2 16 1 1 2 3 4 6 8 7 5 11 10 9 12 15 13 14 16 17
13 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com vd2 (pin 7) vg2 (pin 14) vd1 (pin 6) vd1 (pin 15) vg1 (pin 16) rf out (pin 11) vd2 (pin 13) rf in (pin 3) gnd (pin 17) electrical schematic bias procedures bias-up procedure bias-down procedure vg1, vg2 set to -1.5 v turn off rf supply vd1, vd2 set to +5 v reduce vg1, vg2 to -1.5v. ensure id ~ 0 ma adjust vg1, vg2 more positive until id is 320 ma. this will be ~ vg = -0.5 v turn vd1, vd2 to 0 v apply rf signal to input turn vg1, vg2 to 0 v
14 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. mechanical drawing units: millimeters thickness: 0.85 pkg x,y size tolerance: +/- 0.050 package edge to bond pad dimensions are shown to center of pad
15 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. recommended application circuit ref designator value description u1 -- triquint tga2521-sm c1 c2 c3 c4 c5 c6 1.0 f 1206 smt ceramic capacitor c7 c8 c9 c10 c11 c12 0.01 f 0603 smt ceramic capacitor j1, j2 1092-01a-5 southwest microwave end launch connector c8 c2 c1 c7 c10 c5 c4 c3 c9 c6 c11 c12 vg1 vg2 vd1 vd2 vd1 vd2 z = 50 0 rf in rf out z = 50 0 16 15 14 13 3 6 7 11 gnd 17 u1 j2 j1
16 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. recommended assembly diagram board material: 10 mil thick rogers 4350 c3 c9 rf in z = 50 c8 c2 c1 c10 c4 c11 c5 u1 j1 j2 vd1 (top) vd1 (bot) vd2 (top) vd2 (bot) vg1 and vg2 c6 rf out z = 50 c12 c7
17 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. recommended land pattern board material: 10 mil thick rogers 4350 open plated vias in center of land pattern; vias ar e 12 mil diameter, 20 mil center-to-center spacing rf out rf in vd1 vd2 vd1 vg1 vg2 vd2 nc nc
18 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. assembly notes ordering information recommended surface mount package assembly ? proper esd precautions must be followed while handling packages. ? clean the board with acetone. rinse with alc ohol. allow the circuit to fully dry. ? triquint recommends using a conductive solder pas te for attachment. follow solder paste and reflow oven vendors? recommendations when dev eloping a solder reflow profile. typical solder reflow profiles are listed in the table below. ? hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent me chanical and electrical performance. ? clean the assembly with alcohol. reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec part package style tga2521-sm, tape and reel 4mm x 4 mm qfn surface mount, tape and reel
19 tga2521-sm feb 2010 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com

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